symbol max p-channel units v ds v v gs v i dm i ar e ar mj t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r q jl n-ch 35 50 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r q jl p-ch 35 50 c/w 20 a 14 -20 9.8 power dissipation continuous drain current a i d p d avalanche current b repetitive avalanche energy l=0.1mh b t a =25c t a =70c pulsed drain current b -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a 40 -40 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 65 30 2 1.28 -4 -5 2 1.28 r q ja maximum junction-to-ambient a steady-state -30 t a =70c t a =25c steady-state junction and storage temperature range thermal characteristics: n-channel and p-channel -55 to 150 maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s ao4614b 40v dual p + n-channel mosfet product summary n-channel p-channel v ds (v) = 40v, -40v i d = 6a (v gs =10v) -5a (vgs=-10v) r ds(on) < 30m w (v gs =10v) < 45m w (vgs= -10v) < 38m w (v gs =4.5v) < 63m w (vgs= -4.5v) 100% uis tested 100% uis tested 100% rg tested 100% rg tested general description the ao4614b uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view g1 d1 s1 g2 d2 s2 n-channel p-channel soic-8 top view bottom view pin1 alpha & omega semiconductor, ltd. www.aosmd.com
ao4614b symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1.7 2.5 3 v i d(on) 30 a 24 30 t j =125c 36 45 30 38 g fs 19 s v sd 0.76 1 v i s 2 a c iss 410 516 650 pf c oss 82 pf c rss 43 pf r g 4.6 w q g (10v) 8.9 10.8 nc q g (4.5v) 4.3 5.6 nc q gs 2.4 nc q gd 1.4 nc t d(on) 6.4 ns t r 3.6 ns t d(off) 16.2 ns t f 6.6 ns t rr 18 24 ns q rr 10 nc 9 12 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. output capacitance input capacitance v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance i s =1a,v gs =0v v gs =10v, i d =6a diode forward voltage v gs =10v, v ds =20v, r l =3.3 w , r gen =3 w gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =20v, i d =6a r ds(on) static drain-source on-resistance forward transconductance v gs =4.5v, i d =5a v ds =5v, i d =6a m w gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =10v, v ds =5v m a gate-body leakage current v ds =0v, v gs = 20v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =40v, v gs =0v maximum body-diode continuous current dynamic parameters body diode reverse recovery charge i f =6a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =6a, di/dt=100a/ m s total gate charge v gs =0v, v ds =20v, f=1mhz a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2 : nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
ao4614b typical electrical and thermal characteristics: n-c hannel 9 12 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 5v 4.5v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 22 24 26 28 30 32 34 36 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6a v gs =4.5v i d =5a 10 20 30 40 50 60 70 80 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
ao4614b typical electrical and thermal characteristics: n-c hannel 9 12 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10 20 30 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =20v i d = 6a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =74c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
ao4614b symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -2 -3 v i d(on) -30 a 36 45 t j =125c 52 65 50 63 g fs 13 s v sd -0.76 -1 v i s -2 a c iss 750 940 1175 pf c oss 97 pf c rss 72 pf r g 14 w q g (-10v) 17 22 nc q g (-4.5v) 7.9 10 nc q gs 3.4 nc q gd 3.2 nc t d(on) 6.2 ns t r 8.4 ns t d(off) 44.8 ns t f 41.2 ns t rr 21 27 ns q rr 14 nc 9 12 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d = -250 m a, v gs =0v i dss zero gate voltage drain current v ds = -40v, v gs =0v m a gate-body leakage current v ds =0v, v gs = 20v gate threshold voltage v ds =v gs i d = -250 m a on state drain current v gs = -10v, v ds = -5v m w v ds = -5v, i d = -5a r ds(on) static drain-source on-resistance forward transconductance v gs = -10v, i d = -5a v gs = -4.5v, i d = -4a diode forward voltage i s = -1a,v gs =0v maximum body-diode continuous current reverse transfer capacitance dynamic parameters input capacitance v gs =0v, v ds = -20v, f=1mhz gate resistance output capacitance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs = -10v, v ds = -20v, i d = -5a v gs = -10v, v ds = -20v, r l =4 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time gate source charge gate drain charge turn-on delaytime total gate charge body diode reverse recovery time i f = -5a, di/dt=100a/ m s body diode reverse recovery charge i f = -5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating i s based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current ra ting is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating . rev1 : jan 2010 alpha & omega semiconductor, ltd. www.aosmd.com
ao4614b typical electrical and thermal characteristics: p-c hannel 9 12 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 12: on-region characteristics -i d (a) v gs =-3.5v -4v -10v -5v -4.5v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 4.5 -v gs (volts) figure 13: transfer characteristics -i d (a) 30 35 40 45 50 55 60 65 0 5 10 15 20 -i d (a) figure 14: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 17: body-diode characteristics -i s (a) 25c 125c 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 15: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-5a v gs =-4.5v i d =-4a 30 50 70 90 110 130 3 4 5 6 7 8 9 10 -v gs (volts) figure 16: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
ao4614b typical electrical and thermal characteristics: p-c hannel 9 12 0 2 4 6 8 10 0 3 6 9 12 15 18 q g (nc) figure 18: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 -v ds (volts) figure 19: capacitance characteristics capacitance (pf) c iss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 21: single pulse power rating junction- to-ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 22: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 20: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =-20v i d = -5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =74c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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